Growth of GaN and AlxGa1-xN thin films on 6H-SiC(0001) and Si(111) substrates with low densities of defects using the PENDEO(TM) process and the characterization of the resulting materials are reported. The application of a mask on the GaN seed structures hinders the vertical propagation of threading dislocations of the seed material during regrowth, but introduces. a misregistry in the overgrowing material resulting in low quality crystal growth. This misregistry has been eliminated due to advanced processing: and the exclusion of the masking layer. The new generation of samples do not show any misregistry, as shown by transmission electron microscopy.
Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition
Gehrke, T., Linthicum, KJ., Rajagopal, P., Preble, EA., & Davis, RF. (2000). Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition. MRS Internet Journal of Nitride Semiconductor Research, 5.