The electrical properties of EuO1?x magnetic semiconductors were studied to determine the conduction mechanism. We considered the effect of oxygen vacancy concentration on the carrier concentration, the relaxation time and the electrical resistivity. These quantities were calculated as functions of temperature and external magnetic field and the results compared with experimental data for thin films of EuO with oxygen vacancies.
Influence of oxygen vacancy concentration on electrical resistivity in EuO1?x
Lubecka, M., Wegrzyn, A., & Temple, D. (1985). Influence of oxygen vacancy concentration on electrical resistivity in EuO1?x. Thin Solid Films, 131(1-2), 15-20. https://doi.org/10.1016/0040-6090(85)90370-0
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