Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier

John D. Williams; Edward Alfred Preble; Yi Zhou; Dake Wang; Claude Ahyi; Chin-Che Tin; John D. Williams; Minseo Park; N. Mark Williams; Andrew Hanser; Edward Alfred Preble

Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier

Zhou, Y., Wang, D., Ahyi, C., Tin, C-C., Williams, J., Park, M., Williams, N. M., Hanser, A., & Preble, E. A. (2007). Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier. Journal of Applied Physics, 101(2), Article 024506. https://doi.org/10.1063/1.2425004

Copy citation

Abstract

The temperature-dependent electrical characteristics of Schottky rectifiers fabricated with a SiO2 field plate on a freestanding n(-) gallium nitride (GaN) substrate were reported in the temperature range of 298-473 K. The Schottky barrier heights evaluated from forward current-voltage measurement revealed an increase of Schottky barrier height and series resistance but a decrease of ideality factor (n) with increasing temperature. However, the Schottky barrier heights evaluated from capacitance-voltage measurement remained almost the same throughout the temperature range measured. The Richardson constant extrapolated from ln(J(0)/T-2) vs 1/T plot was found to be 0.029 A cm(-2) K-2. A modified Richardson plot with ln(J(0)/T-2) vs 1/nT showed better linearity, and the corresponding effective Richardson constant was 35 A cm(-2) K-2. The device showed a high reverse breakdown voltage of 560 V at room temperature. The negative temperature coefficients were found for reverse breakdown voltage, which is indicative of a defect-assisted breakdown. (c) 2007 American Institute of Physics.