A remote plasma enhanced CVD apparatus and method for growingsemiconductor layers on a substrate, wherein an intermediate feedgas, which does not itself contain constituent elements to bedeposited, is first activated in an activation region to produceplural reactive species of the feed gas. These reactive species arethen spatially filtered to remove selected of the reactive species,leaving only other, typically metastable, species which are thenmixed with a carrier gas including constituent elements to bedeposited on the substrate. During this mixing, the selectedspatially filtered reactive species of the feed gas chemicallyinteracts, i.e., partially dissociates and activates, in the gasphase, the carrier gas, with the process variables being selectedso that there is no back-diffusion of gases or reactive speciesinto the feed gas activation region. The dissociated and activatedcarrier gas along with the surviving reactive species of the feedgas then flows to the substrate. At the substrate, the survivingreactive species of the feed gas further dissociate the carrier gasand order the activated carrier gas species on the substratewhereby the desired epitaxial semiconductor layer is grown on thesubstrate.
Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
Markunas, R., Hendry, R., & Rudder, R. (1989). IPC No. U.S. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer. (U.S. Patent No. 4870030).