An optoelectronic device includes a first electrode, a quantum dot layer disposed on the first electrode including a plurality of quantum dots, a fullerene layer disposed directly on the quantum dot layer wherein the quantum dot layer and the fullerene layer form an electronic heterojunction, and a second electrode disposed on the fullerene layer. The device may include an electron blocking layer. The quantum dot layer may be modified by a chemical treatment to exhibit increased charge carrier mobility.
Quantum dot-fullerene junction optoelectronic devices
Klem, E., & Lewis, J. (2014). IPC No. U.S. Quantum dot-fullerene junction optoelectronic devices. (Patent No. 8729528).