A plasma processing system and method wherein a power sourceproduces a magnetic field and an electric field, and a windowdisposed between the power source and an interior of a plasmachamber couples the magnetic field into the plasma chamber therebyto couple power inductively into the chamber and based thereonproduce a plasma in the plasma chamber. The window can be shapedand dimensioned to control an amount of power capacitively coupledto the plasma chamber by means of the electric field so that theamount of capacitively coupled power is selected in a range fromzero to a predetermined amount. Also, a tuned antenna strap havingr.f. power applied thereto to produce a standing wave therein canbe arranged adjacent the window to couple magnetic field from acurrent maximum formed in the strap to the interior of the chamber.A desired amount of magnetic field and/or electric field couplingcan be produced by arrangement of the chamber window adjacent thatportion of the antenna strap exhibiting the desired current/voltagerelationship. The system may be formed in a line sourceconfiguration, or in a cylindrical source configuration. The windowmay have slots and/or apertures, the size and shape of which may bevariable.
Plasma processing system and method
Markunas, R., Fountain, G., & Hendry, R. (2003). IPC No. U.S. Plasma processing system and method. (Patent No. 6558504).