• Patent

Method of fabricating a thin film transistor

A thin film transistor comprises an insulator interposed betweena gate electrode and a polycrystalline silicon semiconductor layer,with the polycrystalline silicon semiconductor layer having asource region and a drain region with a channel between the sourceregion and the drain region. The insulator comprises an ONOstructure having an interfacial oxide layer in contact with thepolycrystalline silicon semiconductor layer, a cap oxide layer incontact with the gate electrode, and a nitride layer interposedbetween the interfacial oxide layer and the nitride layer.

Citation

Morita, T., & Markunas, R. (1996). IPC No. U.S.Method of fabricating a thin film transistor (Patent No. 5585292.)