RTI uses cookies to offer you the best experience online. By clicking “accept” on this website, you opt in and you agree to the use of cookies. If you would like to know more about how RTI uses cookies and how to manage them please view our Privacy Policy here. You can “opt out” or change your mind by visiting: http://optout.aboutads.info/. Click “accept” to agree.
A thin film transistor comprises an insulator interposed between
a gate electrode and a polycrystalline silicon semiconductor layer,
with the polycrystalline silicon semiconductor layer having a
source region and a drain region with a channel between the source
region and the drain region. The insulator comprises an ONO
structure having an interfacial oxide layer in contact with the
polycrystalline silicon semiconductor layer, a cap oxide layer in
contact with the gate electrode, and a nitride layer interposed
between the interfacial oxide layer and the nitride layer.