Method of fabricating a thin film transistor
Morita, T., & Markunas, R. (1996). Method of fabricating a thin film transistor. (U.S. Patent No. 5585292). http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=5585292
Abstract
A thin film transistor comprises an insulator interposed between a gate electrode and a polycrystalline silicon semiconductor layer, with the polycrystalline silicon semiconductor layer having a source region and a drain region with a channel between the source region and the drain region. The insulator comprises an ONO structure having an interfacial oxide layer in contact with the polycrystalline silicon semiconductor layer, a cap oxide layer in contact with the gate electrode, and a nitride layer interposed between the interfacial oxide layer and the nitride layer.
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