• Patent

Method of fabricating a thin film transistor

Citation

Morita, T., & Markunas, R. (1996). IPC No. U.S.Method of fabricating a thin film transistor (Patent No. 5585292.)

Abstract

A thin film transistor comprises an insulator interposed between a gate electrode and a polycrystalline silicon semiconductor layer, with the polycrystalline silicon semiconductor layer having a source region and a drain region with a channel between the source region and the drain region. The insulator comprises an ONO structure having an interfacial oxide layer in contact with the polycrystalline silicon semiconductor layer, a cap oxide layer in contact with the gate electrode, and a nitride layer interposed between the interfacial oxide layer and the nitride layer.