• Patent

Low temperature chemical vapor deposition and etching apparatus and method

Citation

Venkatasubramanian, R. (2000). IPC No. U.S.Low temperature chemical vapor deposition and etching apparatus and method (Patent No. 6071351.)

Abstract

An apparatus and method for the growth and etching of materials where a substrate on which a film is being deposited or which is being etched is maintained at a lower temperature than a precursor cracking temperature. The apparatus includes a susceptor with separators, made of an optically transmissive material with low thermal conductivity, such as quartz, upon which the substrates are mounted. The susceptor is heated to a precursor cracking temperature while the substrates are maintained at a lower deposition temperature by the separators. The substrates are heated by black body radiation transmitted through the separators to the substrates.