An apparatus and method for the growth and etching of materialswhere a substrate on which a film is being deposited or which isbeing etched is maintained at a lower temperature than a precursorcracking temperature. The apparatus includes a susceptor withseparators, made of an optically transmissive material with lowthermal conductivity, such as quartz, upon which the substrates aremounted. The susceptor is heated to a precursor crackingtemperature while the substrates are maintained at a lowerdeposition temperature by the separators. The substrates are heatedby black body radiation transmitted through the separators to thesubstrates.
Low temperature chemical vapor deposition and etching apparatus and method
Venkatasubramanian, R. (2000). IPC No. U.S. Low temperature chemical vapor deposition and etching apparatus and method. (U.S. Patent No. 6071351).
Abstract
Abstract
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