• Journal Article

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN

Citation

You, S., Detchprohm, T., Zhu, M., Hou, W., Preble, E. A., Hanser, D., ... Wetzel, C. (2010). Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN. Applied Physics Express, 3(10), [102103]. DOI: 10.1143/APEX.3.102103

Abstract

Linearly polarized light emission is analyzed in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photoluminescence, m-plane GaInN/GaN structures reach a polarization ratio from 0.70 at 460nm to 0.89 at 515nm peak wavelength. For a-plane structures, the polarization ratio is 0.53 at 400nm and 0.60 at 480-510 nm. In electroluminescence the polarization ratio is 0.77 at 505nm in 350 x 350 mu m(2) m-plane devices at 20 mA. Such a device should allow 44% power saving compared with nonpolarized c-plane LEDs combined with a polarizing filter, as commonly used in LED-backlit liquid crystal displays. (C) 2010 The Japan Society of Applied Physics