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An optoelectronic semiconductor device using stimulated emission
and absorption to achieve the functions of detection, modulation,
generation and/or amplification of light. In one embodiment, the
device includes a waveguide heterojunction bipolar transistor (HBT)
biased in the active mode where the minority carrier concentration
in the base is designed with bandgap engineering to optimize
optical gain in this region. This HBT configuration allows optical
modulation at considerably higher frequencies and/or with improved
efficiency compared to the prior art, and is particularly suited to
the fabrication of direct or external modulated wideband fiber
optic links.
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