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High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

AlN/GaN heterostructures with 1700-cm(2)/V . s Hall mobility have been grown by molecular beam epitaxy on freestanding GaN substrates. Submicrometer gate-length (L-G) metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) fabricated from this material show excellent dc and RF performance. L-G = 100 nm devices exhibited a drain current density of 1.5 A/mm, current gain cutoff frequency f(T) of 165 GHz, a maximum frequency of oscillation f(max) of 171 GHz, and intrinsic average electron velocity v(e) of 1.5 x 10(7) cm/s. The 40-GHz load-pull measurements of L-G = 140 nm devices showed 1-W/mm output power, with a 4.6-dB gain and 17% power-added efficiency. GaN substrates provide a way of achieving high mobility, high v(e), and high RF performance in AlN/GaN transistors.

Citation

Meyer, D. J., Deen, D. A., Storm, D. F., Ancona, M. G., Katzer, D. S., Bass, R., ... Evans, K. R. (2013). High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates. IEEE Electron Device Letters, 34(2), 199-201. DOI: 10.1109/LED.2012.2228463

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