• Conference Proceeding

High-density 3-D IC integration technology for mixed-signal microsystems

Citation

Temple, D. S., Lueck, M. R., Vick, E. P., Malta, D., & Lannon, J. M. (2013). High-density 3-D IC integration technology for mixed-signal microsystems. In Government Microcircuit Applications & Critical Technology Conference (GOMACTech), Las Vegas, NV, March 11-14, 2013,.

Abstract

We present results of the development of high-density 3-D interconnect technology that is applicable to the integration of heterogeneous integrated circuits. The technology relies on through-silicon vias, advanced thinning of silicon wafers and copper/tin-copper solid-liquid diffusion bonding to produce vertical interconnects at a density of 1×106/cm2. The processing approach allows for the integration of known-good-die in either die-to-die or die-to-wafer bonding configurations, providing the flexibility desirable for the implementation in mixed-signal microsystems.