• Conference Proceeding

Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor

Citation

Sood, A. K., Richwine, R. A., Puri, Y. R., DiLello, N., Hoyt, J. L., Akinwande, T. I., ... Bramhall, T. G. (2009). Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor. In Presented at Infrared Technology and Applications XXXV Conference, Orlando, FL, April 13, 2009., [7298],.

Abstract

SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs, InSb, and HgCdTe based IRFPA's. Various approaches including device designs are discussed for reducing the dark current in SiGe detector arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce the leakage current for small detector size and fabrication techniques. In addition several innovative approaches that have the potential of increasing the spectral response to 1.8 microns and beyond.