• Journal Article

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Citation

Leach, J. H., Wu, M., Ni, X., Li, X., Xie, J., Ozgur, U., ... Lu, C-Z. (2010). Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates. Applied Physics Letters, 96(10), [102109]. DOI: 10.1063/1.3358192

Abstract

We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 mu m, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be similar to 1.0 x 10(7) cm/sec for a 1 mu m device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358192]