• Journal Article

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

Citation

Zhu, M., You, S., Detchprohm, T., Paskova, T., Preble, E. A., & Wetzel, C. (2010). Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 207(6), 1305-1308. DOI: 10.1002/pssa.200983645

Abstract

We report the growth and structural characteristics of green and yellow (529-576 nm) GaInN/GaN light emitting diodes (LEDs) grown on two types of c-plane substrates bulk GaN and sapphire. In this longer wavelength range, depending on the substrate, we find different strain relaxation mechanisms within the GaInN/GaN quantum well (QW) region. In optimized epitaxy, structures on sapphire that contain a low density of threading dislocations (TDs) within the n-GaN show virtually no generation of additional misfit dislocations (MDs) (