Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
Citation
Einfeldt, S., Roskowski, A. M., Preble, E. A., & Davis, R. F. (2002). Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. Applied Physics Letters, 80(6), 953-955.
Abstract
The strain in thin GaN layers grown by maskless pendeoepitaxy has been investigated using high-resolution x-ray diffraction and finite-element simulations. The crystallographic tilt of the free-hanging wings was determined to result from the strain relaxation of the seed stripes along [0001]. The impact of the dimensions of the pendeostructure and of the formation of crystal defects on the expected wing tilt is discussed. (C) 2002 American Institute of Physics.