The strain in thin GaN layers grown by maskless pendeoepitaxy has been investigated using high-resolution x-ray diffraction and finite-element simulations. The crystallographic tilt of the free-hanging wings was determined to result from the strain relaxation of the seed stripes along [0001]. The impact of the dimensions of the pendeostructure and of the formation of crystal defects on the expected wing tilt is discussed. (C) 2002 American Institute of Physics.
Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
Einfeldt, S., Roskowski, AM., Preble, EA., & Davis, RF. (2002). Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy. Applied Physics Letters, 80(6), 953-955.
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