A semiconductor device including a single crystal semiconductorhost material having a surface; an ultrathin pseudomorphic singlecrystal epitaxial interlayer formed on the surface of the hostmaterial, wherein the interlayer is formed of a material and has athickness selected so that the material of the interlayer iselastically deformed on the surface of the host material to matchthe lattice constant of the interlayer material with the latticeconstant of the host material; and a further material incompatiblewith the host material when interfaced directly with the hostmaterial, but compatible with the interlayer, provided on theinterlayer and thereby interfaced with the host material to performa predetermined function with respect to the interlayer and thehost material. In a preferred embodiment, the host material is amaterial selected from the group consisting of Ge, GaAs, InSb, InP,group II-V compounds and alloys thereof; the interlayer material isformed of pseudomorphic silicon, having a thickness ofapproximately 10 .ANG. and the further material is formed ofSiO.sub.2 or a conductive material.
Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer
Vitkavage, DJ., Fountain, G., Hattangady, S., Rudder, R., & Markunas, R. (1992). IPC No. U.S. Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer. (U.S. Patent No. 5168330).