• Presentation

Optimization of electrolyte chemistry and process parameter for void-free copper electroplating of high aspect ratio through-silicon vias for 3-D integration

Citation

Malta, D., Gregory, C., Temple, D., Wang, C., Richardson, T., & Zhang, Y. (2009, May). Optimization of electrolyte chemistry and process parameter for void-free copper electroplating of high aspect ratio through-silicon vias for 3-D integration. Presented at 59th Electronic Component and Technology Conference, ECTC 2009, San Diego, CA, May, .

Abstract