An organometallic vapor phase epitaxy-based process route has been developed to achieve homoepitaxial deposition of GaN(0001) films via step-flow growth on substrates having
Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates
Huang, L., Liu, F., Zhu, J., Kamaladasa, R., Preble, E. A., Paskova, T., Evans, K. R., Porter, L. M., Picard, Y. N., & Davis, R. F. (2012). Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates. Journal of Crystal Growth, 347(1), 88-94. https://doi.org/10.1016/j.jcrysgro.2012.03.002
Abstract
Abstract
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