• Article

Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates

An organometallic vapor phase epitaxy-based process route has been developed to achieve homoepitaxial deposition of GaN(0001) films via step-flow growth on substrates having

Citation

Huang, L., Liu, F., Zhu, J., Kamaladasa, R., Preble, E. A., Paskova, T., ... Davis, R. F. (2012). Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates. Journal of Crystal Growth, 347(1), 88-94. DOI: 10.1016/j.jcrysgro.2012.03.002