Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates
An organometallic vapor phase epitaxy-based process route has been developed to achieve homoepitaxial deposition of GaN(0001) films via step-flow growth on substrates having
Citation
Huang, L., Liu, F., Zhu, J., Kamaladasa, R., Preble, E. A., Paskova, T., ... Davis, R. F. (2012). Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates. Journal of Crystal Growth, 347(1), 88-94. https://doi.org/10.1016/j.jcrysgro.2012.03.002
