• Article

Low Interface Trap Density for Remote Plasma Deposited SiO2 on n-type GaN

Citation

Casey Jr, HC., Fountain, G., Alley, R., Keller, BP., & DenBaars, SP. (1996). Low Interface Trap Density for Remote Plasma Deposited SiO2 on n-type GaN. Applied Physics Letters, 68, 1850.