• Journal Article

Low Interface Trap Density for Remote Plasma Deposited SiO2 on n-type GaN

Citation

Casey Jr, H. C., Fountain, G., Alley, R., Keller, B. P., & DenBaars, S. P. (1996). Low Interface Trap Density for Remote Plasma Deposited SiO2 on n-type GaN. Applied Physics Letters, 68, 1850.

Abstract