Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., Udwary, K., Preble, E. A., & Evans, K. R. (2009). Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates. Journal of Applied Physics, 106(11), [113104]. https://doi.org/10.1063/1.3264729

Abstract

InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

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