Effect of nanodot areal density and period on thermal conductivity in SiGe/Si nanodot superlattices
We report on the effect of nanodot (ND) areal density and period on cross-plane thermal conductivity in SiGe/Si nanodot superlattices (NDSLs). For all ND areal densities considered, we found that in SiGe/Si NDSLs decreased monotonically with decreasing period and reached values lower than those in typical SiGe alloys (~6.5 W m?1 K?1). At short periods, was as low as 2.0–2.7 W m?1 K?1 and at a fixed period, increasing the ND areal density led to lower . This work indicates that low can be attained in SiGe/Si NDSLs either with a low SL period, a high ND areal density, or both.
Lee, ML., & Venkatasubramanian, R. (2008). Effect of nanodot areal density and period on thermal conductivity in SiGe/Si nanodot superlattices. Applied Physics Letters, 92(5), 053112. https://doi.org/10.1063/1.2842388