Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth
The effect of m-plane GaN substrate miscut on the growth of InGaN/GaN quantum wells (QWs) was investigated. It was found that the miscut toward [0 0 0 1] c(+)-axis resulted in an increase of In incorporation efficiency and in a green-shift of the QW emission, while the miscut toward [1 1 (2) under bar 0] a-axis resulted in even higher In compositions but it also led to an increased epitaxial surface roughness and deterioration of the QW structures. The results indicated that miscut toward a-axis is undesirable while miscut toward c(+)-axis is beneficial for achieving longer wavelength emission in QWs grown on m-plane GaN substrates. (C) 2010 Elsevier B.V. All rights reserved.
Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., ... Evans, K. R. (2010). Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth. Journal of Crystal Growth, 312(7), 902-905. DOI: 10.1016/j.jcrysgro.2010.01.020