• Journal Article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Citation

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., ... Mehregany, M. (2001). Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates. Journal of Crystal Growth, 231(3), 335-341.

Abstract

Single-crystal wurtzitic GaN(0 0 0 1) films have been grown via conventional methods on high-temperature AIN(0 0 0 1) buffer layers previously deposited on 3C-SiC(I I 1)/Si(I 1 1) substrates using metal organic vapor phase epitaxy (MOVPE). Formation of the 3C-SiC transition laver employed a carburization step and the subsequent deposition of epitaxial 3C-SiC(I 1 1) on the Si(1 1 1) surface using atmospheric pressure chemical vapor deposition (APCVD) for both processes. Similar films., except with significantly reduced dislocation densities. have been grown via pendeo-epitaxy (PE) from the (1 1 (2) over bar 0) sidewalls of silicon nitride masked. raised, rectangular, and [1 (1) over bar 0 0] oriented GaN stripes etched from films conventionally grown on similarly prepared, Si-based, multilayer substrates. The FWHM of the (0 0 0 2) X-ray diffraction peak of the conventionally grown GaN was 1443 arcsec. The FWHM of the photoluminescence (PL) spectra for the near band-edge emission on these films was 19 meV. Tilting in the coalesced PE-grown GaN epilayers of 0.2 degrees was confined to the areas of lateral overgrowth over the masks; no tilting was observed in the material suspended above the trenches. The strong, low-temperature PL band-edge peak at 3.456 eV with an FWHM of 17 meV in the PE films was comparable to that observed in PE GaN films grown on AlN/6H-SiC(0 0 0 1) substrates. (C) 2001 Elsevier Science B.V. All rights reserved.