• Journal Article

Carrier concentration modulation by hot pressing pressure in n-type nanostructured Bi(Se)Te alloy

Citation

Chan, T. T. E., Lebeau, J. M., Venkatasubramanian, R., Thomas, P., Stuart, J., & Koch, C. C. (2013). Carrier concentration modulation by hot pressing pressure in n-type nanostructured Bi(Se)Te alloy. Applied Physics Letters, 103(14), Article No. 144106. DOI: 10.1063/1.4823801

Abstract

We demonstrate experimentally that an optimal hot pressing pressure is required for high thermoelectric power factor in different n-type Bi(Se)Te alloys for a given processing temperature. This phenomenon is attributed to the variations in carrier concentration, which changes the Seebeck coefficient and therefore the power factor. The variations could arise from the difference in the concentration of charged antisite defects as their formation energy changes with pressures. Furthermore, modifications of the energy gap resulting from the lattice distortions at high pressure also likely play a role. (C) 2013 AIP Publishing LLC