Our scientists are exploring new materials to enable novel and significantly improved photo-detectors for use in advanced focal plane arrays for the near infrared to long-wavelength infrared ranges. These materials include Si/Ge superlattices as well as nanodot materials, strained-layer PbSe-PbTeSe superlattices, and InAs/GaSb Type II superlattices.
Our nanoscale Si/Ge detectors on Si substrates have demonstrated enhanced absorption coefficients in the long wavelength range, not accessible with Si. This capability will enable the monolithic integration of Si/Ge photonic devices with Si electronic circuitry. We are also investigating new optoelectronic III-V and strained-layer PbSe-PbTeSe superlattices and devices for applications in infrared detectors in the 3- to 12-micron range.
Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor: Presented at Infrared Technology and Applications XXXV Conference, Orlando, FL, April 13, 2009., Proceedings of SPIE, 7298 (72983D):.
Ultrafast dynamics of photoexcited coherent phonon in Bi2Te3 thin films.
Applied Physics Letters, 92 (1):011108.
High-speed nano-optical photodetector for free space communication, Proceedings of SPIE, 6556 (65560H):.
GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC, Proceedings of SPIE, 3948 (273):.
Physical basis and characteristics of light emission from quantizedplanar Ge structures: International Electron Devices Meeting, 1991. IEDM '91, Washington, DC, Technical Digest.