Optoelectronic Materials
Our scientists are exploring new Si/Ge superlattices as well as nanodot materials to enable novel and significantly improved photo-detectors for advanced focal plane arrays in the 1.3–2 micron wavelength range.
Our nanoscale Si/Ge detectors on Si substrates have demonstrated 100x improvement over other detectors, as well as enhanced absorption coefficients in the long wavelength range, not accessible with Si. This will enable the monolithic integration of Si/Ge photonic devices with Si electronic circuitry. We are also investigating new optoelectronic III-V and strained-layer PbSe-PbTeSe superlattices and devices for applications in infrared detectors in the 3–5 micron range.
Research Citations
- Wu, A.Q., Xu, X., & Venkatasubramanian, R. (2008). Ultrafast dynamics of photoexcited coherent phonon in Bi2Te3 thin films. Applied Physics Letters, 92 (011108).
- Kurtz, R.M., Alim, K.A., Pradhan, R.D., Exterkin, V., Savant, G.D., Venkatasubramanian, R., et al. (2007). High-speed nano-optical photodetector for free space communication. Proceedings of the SPIE, 6556 (65560H).
- Bulman, G.E., Kong, H.S., & Leonard, M.T. (2000). GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC. Proceedings of the SPIE, 3948 (273).
- Venkatasubramanian, R., Malta, D.P., Timmons, M.L., & Hutchby, J.A. (1991). Physical basis and characteristics of light emission from quantizedplanar Ge structures. International Electron Devices Meeting, 1991. IEDM '91, Washington, DC, Technical Digest, 429-432.
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