Optoelectronic Devices
Our engineers conduct research and development of optoelectronic, photovoltaic, and high-speed devices in Group III-V and Group IV materials. In support of this work, we develop and apply high-performance compound semiconductor materials, novel device processing methods, and careful characterization methods such as quantum-efficiency and device I-V measurements.
We have the ability to grow a variety of materials in Group IV, Group III-V, Group II-VI, as well as Group V-VI systems and on a variety of substrates. We routinely grow complex structures such as superlattices, nanodots, and quantum dots in our laboratories and work closely with various collaborators to process these structures into high-performance devices.
Related Research
Research Citations
- Kurtz, R.M., Alim, K.A., Pradhan, R.D., Exterkin, V., Savant, G.D., Venkatasubramanian, R., et al. (2007). High-speed nano-optical photodetector for free space communication. Proceedings of the SPIE, 6556 (65560H).
- Venkatasubramanian, R., & Timmons, M.L. (1994). Optoelectronic properties of eutectic-metal-bonded (EMB) GaAs-AlGaAs structures on Si substrates. Solid-State Electronics, 37 (11):1809-0815.
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